Project results

2025

Research Results

A comprehensive experimental study and theoretical modeling of microresonators and microlasers based on wide-bandgap III-N semiconductor materials were carried out. The eigenmodes, Q-factors, and optical confinement factors of microdisk resonators on sapphire and silicon substrates were calculated; the optimal buffer and barrier layers, as well as the number and placement of InGaN/GaN quantum wells, were determined. Taking the modeling results into account, III-N heterostructures with quantum wells were grown epitaxially and studied by transmission electron microscopy; the influence of growth conditions on the thickness and composition uniformity of the quantum wells, as well as on the expected magnitude of nonradiative recombination, was established. For planar InGaN/GaN structures on sapphire substrates, the contributions of the quantum-confined Stark effect, Shockley-Read-Hall recombination, and Auger recombination to the internal quantum efficiency were analyzed, which is important for the subsequent optimization of lasing characteristics. Photolithography and plasma chemical etching technologies were developed for the formation of disk-, ring-, and polygon-shaped microresonators with smooth vertical sidewalls; microlasers with sizes ranging from 1 to 12 μm were fabricated on sapphire and silicon substrates. Laser emission was demonstrated in the fabricated microlasers at room temperature in the blue and UV spectral ranges on whispering gallery modes with Q-factors above 2300. InGaN/GaN/AlGaN microring lasers on silicon were investigated, and high temperature stability of the emission near 420 nm was demonstrated at temperatures up to 100 °C (T₀ on the order of 200 K, wavelength shift ~0.01 nm/K). It was shown that post-processing of microdisks in an aqueous KOH solution reduces the density of surface states and the lasing threshold. The obtained results demonstrate the high potential of III-N microdisk and microring lasers for use in compact optoelectronic devices, including light sources with enhanced temperature stability.

Publications

1. Kryzhanovskaya N.V., Komarov S.D., Moiseev E.I., Ivanov K.A., Masyutin D.A., Makhov I.S., Tsatsul’nikov A.F., Sakharov A.V., Arteev D.S., Lutsenko E.V., Vainilovich A.G., Nikolaev A.E., Zavarin E.E., Pivovarova A.A., Il’inskaya N.D., Smirnova I.P., Markov L.K., Cherkashin N., Zhukov A.E. High Temperature Operation and Spectral Stability of InGaN/GaN Ring Microlasers on Silicon // IEEE Photonics Technology Letters. 2026. Vol. 38. No. 4. P. 243-246. DOI: 10.1109/LPT.2025.3628068

2. Moiseev E.I., Komarov S.D., Ivanov K.A., Tsatsul’nikov A.F., Lutsenko E.V., Voinilovich A.G., Sakharov A.V., Arteev D.S., Nikolaev A.E., Zavarin E.E., Masyutin D.A., Pivovarova A.A., Ilyinskaya N.D., Smirnova I.P., Markov L.K., Zhukov A.E., Kryzhanovskaya N.V. Lasing in the InGaN/GaN/AlGaN disk microstructures on silicon // Technical Physics Letters. 2025. Vol. 51. No. 6. P. 38–41. DOI: 10.61011/TPL.2025.06.61288.20298

3. Komarov S.D., Vainilovich A.G., Feigin G.A., Sakharov A.V., Nikolaev A.E., Ivanov K.A., Moiseev E.I., Kryzhanovskaya N.V., Nikitina E.V., Tsatsulnikov A.F., Lutsenko E.V., Zhukov A.E. Optical properties of disk microresonators based on wide-bandgap III-N materials // St. Petersburg Polytechnic University Journal. Physics and Mathematics. 2025. Vol. 18. No. 3.1. P. 209-213. DOI: 10.18721/JPM.183.142

4. Masyutin D.A., Rudnev A.A., Moiseev E.I., Vainilovich A.G., Lutsenko E.V., Tsatsulnikov A.F., Sakharov A.V., Arteev D.S., Nikolaev A.E., Pivovarova A.A., Zavarin E.E., Il'inskaya N.D., Markov L.K., Smirnova I.P., Kryzhanovskaya N.V., Zhukov A.E. Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures // St. Petersburg Polytechnic University Journal. Physics and Mathematics. 2025. Vol. 18. No. 3.1. P. 125-128. DOI: 10.18721/JPM.183.123

Events

1. Round table "III-N disk microlasers on silicon: from optical to electrical pumping" as part of the 8th Symposium "Semiconductor Lasers: Physics and Technology."

2. Round table "Optical WGM microlasers for ultraviolet and visible spectral ranges" at the 12th School-Conference with International Participation on Optoelectronics, Photonics and Nanostructures SPbOPEN 2025.

3. Seminar "Research results on the optical properties of wide-bandgap heterostructures and the microphotoluminescence kinetics of microresonators with InGaN/GaN nanostructures" at the Institute of Physics of the National Academy of Sciences of Belarus.

4. Seminar "Threshold and spectral characteristics of UV-range optical microlasers based on wide-bandgap III-N materials" at the Institute of Physics of the National Academy of Sciences of Belarus.

5. Online seminar on the results of the project in 2025.

6. Online seminar on planning tasks and activities for the project in 2026.

2024

Research Results

Within the project, the electromagnetic field distribution in microdisk resonators with an active region based on InGaN/GaN quantum wells on sapphire and silicon substrates was modeled. The optimal thicknesses and compositions of the layers for laser structures were determined, and it was shown that the addition of a buffer layer to the epitaxial structure significantly improves optical confinement. Heterostructures on sapphire and silicon substrates were grown by metal-organic vapor-phase epitaxy. Optimization of growth conditions made it possible to achieve high uniformity and optical quality. The optical properties of the resulting structures were studied by photoluminescence spectroscopy. The dominant recombination mechanism was identified, and the influence of quantum-well depth on charge-carrier transport and diffusion rate was established. A technology for fabricating disk-shaped microresonators supporting whispering gallery modes by plasma chemical etching was developed. In addition, the possibility of their modification by a focused ion beam to improve optical confinement was demonstrated. The modes of hexagonal resonators were modeled, and their potential for microlaser applications was confirmed. Calculations were performed to optimize p-i-n structures with InGaN/GaN quantum wells. Photomasks for the fabrication of injection microdisk lasers were designed and produced.

Publications

1. Kryzhanovskaya N.V., Moiseev E.I., Nadtochiy A.M., Melnichenko I.A., Fominykh N.A., Ivanov K.A., Komarov S.D., Makhov I.S., Lutsenko E.V., Vainilovich A.G., Nahorny A.V., Zhukov A.E. Output Power of III-V Injection Microdisk and Microring Lasers // IEEE Journal on Selected Topics in Quantum Electronics. 2025. Vol. 31. No. 2. Article 1501312. DOI: 10.1109/JSTQE.2024.3450812

2. Melnichenko I.A., Moiseev E.I., Ivanov K.A., Kryzhanovskaya N.V., Vainilovich A.G., Nahorny A.V., Lutsenko E.V., Zhukov A.E. Mode leakage into substrate in microdisk lasers // St. Petersburg Polytechnic University Journal. Physics and Mathematics. 2024. Vol. 17. No. 3.2. P. 212–216.DOI: 10.18721/JPM.173.242

Events

1. Round table "Design, fabrication and study of wide-bandgap III-N heterostructures and high quality resonator microlasers" at the SPbOPEN 2024 conference.

2. Round table "Design, synthesis, and investigation of heterostructures based on wide-bandgap III-N materials and microlasers based on high-Q resonators" at the XVI Russian Conference on Semiconductor Physics.

3. Online seminar on the results of the project in 2024.

4. Online seminar on planning tasks and activities for the project in 2025.